Product Highlight-S2M0080120N

A high-performance 1200v SiC Power MOSFET designed for demanding applications. It is packaged in a robust TO-247-3 case and offers ultra-low conduction losses and stable switching across temperatures from -55°C to +175°C.

With a drain-source voltage of 1200V and a continuous drain current of 36A, it is ideal for high-frequency, energy-sensitive applications. Key features include a low on-resistance of 77 mΩ, a pulsed drain current of 72A, and a power dissipation capacity of 214W.

This MOSFET excels in EV fast charging modules, solar inverters, industrial UPS, and energy storage systems.

Its fast switching speed, robust intrinsic body diode, and positive temperature characteristics ensure reliable and efficient performance.

Elevate your power management solutions with the S2M0080120N for unmatched efficiency and reliability.