Product Highlight – S2M0120120K

A high-performance 1200v SiC Power MOSFET designed for demanding environments. Packaged in a robust TO-247-4 case, this high-voltage n-channel enhancement mode MOSFET offers ultra-low conduction losses and stable switching characteristics across extreme temperatures.

With a drain-source voltage (VDSS) of 1200v and continuous drain current (ID) of 21A, it is perfect for high-frequency, energy-sensitive applications.

Key features include a low on-resistance of 133 mΩ, a pulsed drain current of 66A, and a power dissipation capacity of 156W. Ideal for EV fast charging modules, solar inverters, and industrial UPS, it also excels in DC-DC converters and energy storage systems.

Its fast switching speed, robust intrinsic body diode, and positive temperature characteristics ensure reliable and efficient performance.

Elevate your power management solutions with the S2M0120120K for unmatched efficiency and reliability.